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AH420
* 400 - 2700 MHz * +35.7 dBm P1dB
4W High Linearity InGaP HBT Amplifier
Product Features
Product Description
The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7 dBm of compressed 1dB power, operating off of a single +5V supply. It is housed in a lead-free/green/RoHScompliant 4x5mm DFN package. All devices are 100% RF and DC tested.
Functional Diagram
* -49 dBc ACLR @ 26 dBm * 14 dB Gain @ 2140 MHz * 800 mA Quiescent Current * +5 V Single Supply * MTTF > 100 Years
The AH420 is targeted for use as a final stage amplifier in wireless infrastructure repeaters or as driver stages for high * Lead-free/green/RoHS-compliant power amplifiers where high performance is required. In addition, the amplifier can be used for a wide variety of 12-pin 4x5mm DFN Package other applications within the 400 to 2700 MHz frequency band. By operating off of a single +5V rail, other higher voltage rails are not necessarily needed thus saving system Applications costs. The amplifier also has the flexibility to operate at * Final stage amplifiers for Repeaters higher voltage levels to achieve higher compression if needed by the system.
Function RFIN RFOUT IREF VBIAS NC
Pin No. 3,4,5,6 7,8,9,10 12 1 2,11
* High Power Amplifiers * Mobile Infrastructure * LTE / WCDMA / EDGE / CDMA
Specifications
Parameter
Operational Bandwidth Test Frequency Output Channel Power Gain Input Return Loss Output Return Loss ACPR (2) Output P1dB Output IP3 (4) Quiescent Collector Current (3) Iref Vcc, Vbias
Typical Performance
Units Min
MHz MHz dBm dB dB dB dBc dBm dBm mA mA V 400 2140 +26 14 12 7.4 -49 +35.7 +50 800 20 +5
Typ
Max
2700
Parameter
Frequency Channel Power Gain Input Return Loss Output Return Loss ACPR (2) Output P1dB Noise Figure Output IP3 (4) Quiescent Collector Current (3) Iref Vcc, Vbias
Units
MHz dBm dB dB dB dBc dBm dB dBm mA mA V 940 +27 16 14 6.4 -46.5 +35.2 6.6 +50
Typical
1960 +27 14.1 19 7 -48 +35.6 5.3 +49 800 20 +5 2140 +26 14 12 7.4 -49 +35.7 5.6 +50
13
16
710
900
1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW 3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when the current setting resistor, R4 connected to the Iref pin, is at 82 . 4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The amplifier has been tested for ruggedness to be capable of handling: 10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 C 10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 C 10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 C
Absolute Maximum Ratings
Parameter
Storage Temperature Vcc, Vbias RF Input Power, CW, 50 , T=25C Reference Current, Iref Dissipated Power, Pmax Max Junction Temperature, TJ
For 106 hours MTTF
-65 to +150 C +14 V Input P9dB 170 mA 7W 158 C 10.6 C / W
Rating
Ordering Information
Part No.
AH420-EG AH420-EPCB900 AH420-EPCB1960 AH420-EPCB2140
Description
4W High Linearity InGaP HBT Amplifier 920-960 MHz Evaluation Board 1930-1990 MHz Evaluation Board 2110-2170 MHz Evaluation Board
Thermal Resistance, JC
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 500 pieces on a 7" reel. Specifications and information are subject to change without notice. Page 1 of 8 Aug 2009
TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
AH420
4W High Linearity InGaP HBT Amplifier
Application Circuit PC Board Layout
GND GND Vpd Vcc
Baseplate Configuration
Circuit Board Material: 0.014" GETEK, single layer, 1 oz copper, r = 4.2, Microstrip line details: width = .030", marker spacing = .050"
Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding.
Specifications and information are subject to change without notice. TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 8 Aug 2009
AH420
60
4W High Linearity InGaP HBT Amplifier
S-Parameters (VCC= +5 V, ICC = 800 mA, 25 C, unmatched 50 ohm system)
1.0
Typical Device Data
0.8
6 0.
0
6 0.
Swp Max 6GHz
2.
1.0
0.8
Gain / Maximum Stable Gain
S(1,1) AH420_EG
S11
S(2,2) AH420_EG
S22
Swp Max 6GHz
2. 0
40
0.2
0 3.
0 4.
5.0 0.2
Gain (dB)
20
10.0 10.0
10.0
0
-10.0 -10.0
-40 0 2 Frequency (GHz) 4 6
-0
.4
-0
.4
0 2.
-0 .6
-0 .6
-
-0.8
Swp Min 0.01GHz
-0.8
-
0 2.
Swp Min 0.01GHz
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line. S-Parameters (VCC = +5 V, ICQ = 800 mA, 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (deg) S21 (dB) S21 (deg) S12 (dB) S12 (deg) S22 (dB) S22 (deg)
10 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300
-1.22 -0.44 -0.31 -0.28 -0.30 -0.40 -0.43 -0.50 -0.59 -0.74 -0.98 -1.40 -2.04 -2.78 -2.88 -2.04 -1.32 -0.95 -0.78 -0.69 -0.63 -0.61 -0.58 -0.54
-176.79 -177.23 -178.77 179.40 178.17 176.72 175.77 173.96 171.86 169.75 167.20 164.19 161.94 163.47 169.61 171.93 169.73 167.05 164.66 162.98 161.89 161.39 161.33 161.51
29.97 24.42 19.17 10.27 6.16 3.74 2.09 0.99 0.42 0.16 0.25 0.63 1.22 1.53 0.74 -1.59 -4.55 -7.58 -10.52 -13.08 -15.60 -17.79 -19.66 -21.87
155.67 117.15 103.73 90.61 84.91 79.16 74.69 69.01 62.55 55.48 46.05 34.50 18.13 -4.61 -32.66 -58.88 -77.51 -90.68 -100.04 -106.66 -112.19 -116.53 -121.50 -124.38
-52.77 -45.04 -44.01 -43.22 -43.10 -43.48 -41.72 -41.21 -40.35 -39.33 -38.86 -38.13 -36.71 -35.70 -36.03 -37.72 -39.74 -41.31 -42.50 -43.74 -42.73 -43.74 -43.35 -42.62
64.11 32.25 11.29 5.32 -0.42 36.07 5.11 -1.08 -4.63 -10.41 -20.47 -34.84 -51.74 -78.76 -114.19 -145.67 -179.01 163.85 141.73 129.82 112.53 105.15 107.61 97.03
-1.61 -1.05 -1.16 -0.94 -0.93 -1.02 -1.07 -1.11 -1.15 -1.21 -1.24 -1.24 -1.19 -0.95 -0.62 -0.52 -0.55 -0.68 -0.80 -0.87 -0.90 -0.92 -0.92 -0.97
-1.0
-39.70 -122.90 -150.31 -169.59 -174.28 -177.33 -177.23 -178.10 -178.55 -179.14 -179.88 179.85 179.15 178.06 175.59 171.28 168.08 165.55 164.25 162.92 162.24 161.57 161.67 162.11
Device S-parameters are available for download off of the website at: http://www.tqs.com
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 8 Aug 2009
-4 .0
-3
.0
-4 .0
DB(GMax()) AH420_EG
DB(|S(2,1)|) AH420_EG
.0
-5.
0
-5.
0
-20
2 -0.
2 -0.
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0. 4
-3
0. 4
0 3.
0 4.
5.0
AH420
Frequency (MHz) Channel Power Power Gain Input Return Loss Output Return Loss ACPR P1dB Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
920-960 MHz Reference Design (AH420-EPCB900)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25C
920 940 960 Units +27 +27 +27 dBm 15.9 16 16.1 dB 17 14 11 dB 5.3 6.4 8.0 dB -47 -46.5 -46.5 dBc +35.2 +35.2 +35.2 dBm +51 6.5 +50 6.6 800 +5
C7 C8
+49 6.7
dBm dB mA V
Noise Figure Quiescent Current, Icq Vpd, Vcc
D1
FB1
C22
R3
C3
C5
C4
C6
C2 C1 R1 C14 C17 C13 C15 C12
Notes: 1. The primary RF microstrip line is 50 . 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 75mil from AH420 RFout pin. (3.9 o @ 940 MHz) 6. The edge of C15 is placed 145mil from the edge of C13. (7.5 o @ 940 MHz) 7. The edge of C14 is placed at 150mil from AH420 Rfin pin. (7.7 o @ 940 MHz) 8. The edge of C17 is placed against the edge of C14. 9. 0 jumpers can be replaced with copper trace in target application.
Return Loss
0 -5
T=25C
Gain vs. Frequency
18
T=25C
R2
R4 L1
OIP3 vs. Output Power/Tone vs. Temperature
f=940 MHz
55
17
50
OIP3 (dBm)
S11, S22 (dB)
Gain (dB)
-10 -15 -20
16
45
15
40
S11 S22
+25C -40C +85C
14 0.90
0.92
0.94
0.96
0.98
-25 0.90
35
0.92 0.94 Frequency (GHz)
T=25C
0.96
0.98
20
22
Frequency (GHz)
ACPR vs. Output Average Power vs. Frequency
T=25C
24 26 Output Power (dBm)
28
30
OIP3 vs. Output Power/Tone vs. Frequency
52
P1dB vs. Frequency vs. Temperature
37
-35 -40
ACPR (dBc)
W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW
OIP3 (dBm)
50
36
48
-50 -55 -60
920 MHz 940 MHz 960 MHz
P1dB (dBm)
-45
35
46
34
44
920 MHz
42
940 MHz
960 MHz
29 30
+25C
33 920 930
-40C
940 Frequency (MHz)
T=25C
+85C
950 960
-65 15 16 17 18 19 20 21 22 Output Power (dBm)
T=25C
23
24
25
24
25
26 27 28 Output Power (dBm)
Current vs Output Average Power vs. Frequency 1100
Collector Current (mA) 8
Noise Figure vs. Frequency
T=25C
Efficiency vs Output Average Power vs. Frequency 20
Collector Efficiency (%)
1050 1000 950 900 920 MHz 850 24 25 26 27 28 Output Power (dBm) 29 30 940 MHz 960 MHz
7
15
NF (dB)
6
10
5
5 920 MHz 940 MHz 960 MHz 29 30
4 0.90
0
0.92 0.94 0.96 0.98
24
25
Frequency (GHz)
26 27 28 Output Power (dBm)
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 8 Aug 2009
AH420
Frequency (MHz) Channel Power Power Gain Input Return Loss Output Return Loss ACLR P1dB Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
1930-1990 MHz Reference Design (AH420-EPCB1960)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25C
1930 1960 1990 +27 +27 +27 13.4 14.1 14.1 13 19 11 4.7 7 12 -49 -48 -47 +35.6 +35.6 +35.6 +49 5.6 +49 5.3 800 +5
C7 C8
Units dBm dB dB dB dBc dBm dBm dB mA V
+49 5.3
Noise Figure Quiescent Current, Icq Vpd, Vcc
D1
C3
C5
C9 C10 C11
C4
C6
C2 C1 R1 C14 C13 C15 C12 C17 C16
Notes: 1. The primary RF microstrip line is 50 . 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 75mil from AH420 RFout pin. (8.0 o @ 1960 MHz) 6. The edge of C15 is placed 50mil from the edge of C13. (5.3 o @ 1960 MHz) 7. The edge of C16 is placed 345mil from the edge of C15. (37 o @ 1960 MHz) 8. The edge of C14 is placed at 160mil from AH420 Rfin pin. (17.2 o @ 1960 MHz) 9. The edge of C17 is placed 95mil from the edge of C14. (10.2 o @ 1960 MHz) 10. 0 jumpers can be replaced with copper trace in target application.
FB1
R3 R2
Gain vs. Frequency
15 14
T=25C
S11, S22 (dB)
ACLR (dBc)
R4 L1
Return Loss
0 -5 -10 -15 -20
T=25C
ACLR vs. Output Average Power vs. Frequency -35 -40 -45 -50 -55 S11 S22 -60
2.00
T=25C
Gain (dB)
13 12 11 10 1.92
1930 MHz 24 25
1960 MHz
1990 MHz 28 29
1.94
1.96 Frequency (GHz)
1.98
2.00
-25 1.92
1.94
1.96 Frequency (GHz)
1.98
26 27 Output Power (dBm)
Current vs Output Average Power vs. Frequency 1050
Collector Current (mA)
T=25C
Noise Figure vs. Frequency
T=25C
8
1000 950 900 850 1930 MHz 800 24 25 26 27 Output Power (dBm) 28 29 1960 MHz 1990 MHz
7
NF (dB)
6
5
4 1.90
1.92
1.94
1.96
1.98
2.00
Frequency (GHz)
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 8 Aug 2009
AH420
4W High Linearity InGaP HBT Amplifier
2010-2025 MHz Application Circuit Performance Plots
TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW
Typical TD-SCDMA Performance at 25C Frequency (MHz) 2010 2015 2025 Units Power Gain 14.9 15 14.8 dB Input Return Loss 14 13 12 dB Output Return Loss 11 12 13 dB mA Quiescent Current, Icq 800 V Vpd +5 V Vcc +5
C7 C8
D1
FB1
R3
C3
C5
C9 C10 C11
R2 C4
R4 C6 L1
C2 C1 R1 C14 C13 C15 C12 C17 C16
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The edge of C13 is placed at 75mil from AH420 RFout pin. (8.3 o @ 2015 MHz) 4. The edge of C15 is placed 50mil from the edge of C13. (5.5 o @ 2015 MHz) 5. The edge of C16 is placed 345mil from the edge of C15. (38 o @ 2015 MHz) 6. The edge of C14 is placed at 160mil from AH420 RFin pin. (17.6 o @ 2015 MHz) 7. The edge of C17 is placed 95mil from the edge of C14. (10.5 o @ 2015 MHz)
Gain vs Frequency
16 15 14 13 12
T=25C
Return Loss
0 -5
T=25C
Efficiency vs Output Average Power vs. Frequency
20 Collector Efficiency (%)
T=25C
15
S11, S22 (dB)
Gain (dB)
-10 -15 -20
10
5
S21
11 2.00 2.01 2.02 Frequency (GHz) 2.03 2.04 -25 2.00 2.01 2.02 Frequency (GHz)
S11
2.03
S22
0
2.04
2010 MHz
20 21 22
2015 MHz
2025 MHz
26 27 28
23 24 25 Output Power (dBm)
Current vs Output Average Power vs. Frequency
1000
Collector Current (mA)
T=25C
ACLR vs. Output Average Power vs. Frequency -40 -42 -44
ACLR (dBc)
T=25C
950
-46 -48 -50 -52 -54 -56 -58 -60
900
850 2010 MHz 800 20 21 22 23 24 25 26 Output Power (dBm) 27 28 2015 MHz 2025 MHz
2010 MHz
2015 MHz
2025 MHz
19
20
21 22 23 Output Power (dBm)
24
25
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 8 Aug 2009
AH420
Frequency (GHz) Channel Power Power Gain Input Return Loss Output Return Loss ACLR P1dB Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
2110-2170 MHz Reference Design (AH420-EPCB2140)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25C
2110 2140 2170 Units +26 +26 +26 dBm 13.3 14 14 dB 14 12 10 dB 5 7.4 9 dB -50 -49 -50 dBc +35.8 +35.7 +35.2 dBm +49 5.8 +50 5.6 800 +5
C7 C8
+50 5.5
dBm dB mA V
Noise Figure Quiescent Current, Icq Vpd, Vcc
D1
FB1
R3
C3
C5
C4
C6
C2 C1 R1 C14 C13 C15 C12 C16 C17
Notes: 1. The primary RF microstrip line is 50 . 2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1. 3. Components shown on the silkscreen but not on the schematic are not used. 4. Vpd used for device power down (low=RF off) 5. The edge of C13 is placed at 65mil from AH420 RFout pin. (7.6 o @ 2140 MHz) 6. The edge of C15 is placed 60mil from the edge of C13. (7.0 o @ 2140 MHz) 7. The edge of C16 is placed 340mil from the edge of C15. (39.9 o @ 2140 MHz) 8. The edge of C14 is placed at 155mil from AH420 RFin pin. (18.2 o @ 2140 MHz) 9. The edge of C17 is placed 205mil from the edge of C14. (24.0 o @ 2140 MHz) 10. 0 jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
15 14
T=25C
S11, S22 (dB)
ACLR (dBc)
R2
R4 C20 C22 C21 L1
Return Loss
0 -5 -10 -15 -20
T=25C
ACLR vs. Output Average Power vs. Frequency
-35 -40 -45 -50 -55
T=25C
Gain (dB)
13 12 11 10 2.10
S11
2.12 2.14 2.16 2.18 2.20
S22
-60
2.20
2110 MHz
24 25
2140 MHz
2170 MHz
28 29
-25 2.10
2.12
Frequency (GHz)
ACLR vs. Output Average Power vs. Temperature
-40 -45
55
2.14 2.16 Frequency (GHz)
2.18
26 27 Output Power (dBm)
f=2140 MHz
OIP3 vs. Output Power / tone vs. Frequency
OIP3 vs. Output Power/Tone vs. Temperature 55
50
50
OIP3 (dBm)
ACLR (dBc)
-50 -55 -60
OIP3 (dBm)
45
45
40
40
+25C
-65 23 24
-40C
+85C
35
2140 MHz
28
20 22
2110 MHz
2170 MHz
35
30
+25C
-40C
+85C
25 26 Output Power (dBm)
27
24 26 28 Output Power / tone (dBm)
T=25C
20
22
24 26 Output Power (dBm)
Noise Figure vs. Frequency
T=25C
28
30
P1dB vs. Frequency vs. Temperature
38
Current vs Output Average Power vs. Frequency 1050
Collector Current (mA)
8
37 P1dB (dBm)
1000 950 900 850 2110 MHz 800 2140 MHz 2170 MHz 28 29
7
NF (dB)
36
6
35
5
+25C
34 2.10 2.12
-40C
2.14 2.16 Frequency (GHz)
+85C
2.18 2.20
24
25
26 27 Output Power (dBm)
4 2.10
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 7 of 8 Aug 2009
AH420
4W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the backside metallization is Matte Tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The AH420 will be marked with an "AH420G" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXX" is an auto-generated number, and "Z" refers to a wafer number in a lot batch.
AH420G
YXXX-Z
Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
Mounting Configuration / Land Pattern
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1A Passes 250V to <500V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Pin 1 2, 11 3, 4, 5, 6 7, 8, 9, 10 12
Function VBIAS No Connect RF Input VCC / RF Output IREF
Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 8 of 8 Aug 2009

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